| PART |
Description |
Maker |
| DB300S DB300R DB300A SIDAC DB120A DB120R DB120S DB |
Bilateral Voltage triggered Switch
Bilateral Voltage triggered Swit h Breakover Voltage:95-330Volts
Bilateral Voltage triggered Swit h Breakover Voltage:95-330Volts c
|
Jinan Jingheng (Group) ...
Jinan Jing Heng Electro...
|
| SI4392DY SI4392DY06 |
N-Channel Reduced Qg, Fast Switching WFET?
N-Channel Reduced Qg, Fast Switching WFET庐
N-Channel Reduced Qg, Fast Switching WFET㈢
|
Vishay Siliconix
|
| SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V（D-S），Qg，快速开
N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| STU7NA80 5968 |
N - CHANNEL 800V - 1.3 Ohm - 6.5A - Max220 FAST POWER MOSFET
N - CHANNEL 800V - 1.3 - 6.5A - Max220 FAST POWER MOSFET
From old datasheet system
N - CHANNEL 800V - 1.3ohm - 6.5A - Max220 FAST POWER MOSFET
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| BUZ80A 2955 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL 800V - 2.5ohm - 3.8A - TO-220 FAST POWER MOS TRANSISTOR
N - CHANNEL 800V - 2.5W - 3.8A - TO-220 FAST POWER MOS TRANSISTOR
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| IXFV26N60P IXFV26N60PS |
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated 26 A, 600 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
| STGY40NC60VD |
N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT
N-channel 600V - 50A - Max247 Very fast PowerMESH⑩ IGBT
|
STMicroelectronics
|
| STGP10NC60H P10NC60H |
N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH IGBT
N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH⑩ IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| IXTQ22N50P IXTH22N50P IXTV22N50P IXTV22N50PS |
MOSFET N-CH 500V 22A TO-3P 22 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS, Corp.
IXYS Corporation
|
| STH9NA80 STH9NA80FI STW9NA80 |
N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR
N-Channel 800V-0.85Ω-9.1A - TO-247/ISOWATT218 Fast Power MOS Transistor(Ｎ沟道快速功率ＭＯＳ晶体
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
|
| STGW39NC60VD07 STGW39NC60VD |
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH⑩ IGBT
|
STMicroelectronics
|
